The same preoccupation with boron is apparent in the coverage received by the Group 13 elements in the comprehensive and regularly updated volume of the Gmelin Handbook.
This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging.
AlGaAs is the most widely studied and applied of the ternary semiconductors. An international array of 30 experts have contributed under the editorship of a world authority on AlGaAs, Dr. S. Adachi of Gunma University, Japan.
Power device products made from these materials have become available during the last five years from many companies.This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices.
This volume provides scientists, physicists, electrical engineers, and technology professionals and managers working on microwave technology with practical information on GaAs applications in radar, electronic warfare, communications, ...
Chem. A2007, 111, 6481. (b) Tzeng, Y.-R.; Raghunath, P.; Chen, S.-C.; Lin, M. C. J. Phys. Chem. A 2007, 111, 6781. Mason, M. R.; Song, B. X.; Kirschbaum, K. J. Am. Chem. Soc. 2004, 126, 11812. See, for example, (a) Schulz, S.; Nieger, ...
This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature ...
Gallium Arsenide: Edited by John S. Blakemore
Gallium-67 Imaging
This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent materials properties.