This work provides a comprehensive discussion of the bias dependence of equivalent circuit parameters for the three devices and an extensive discussion of temperature dependence. It: covers recess-etched MESFETs and self-aligned MESFETs with and without lightly-doped-drains and JFETs; analyzes GaAs-based pHEMTS and InP lattice-matched HEMT equivalent circuits; and describes a large-signal, temperature-dependent model extractor for A1GaAs-GaAs HBTs. The book is intended for circuit designers, process and device developers and test engineers.
Wastewater Treatment and Separation Methods
Principles, Protocols, and Architecture
7.8 Cris E. Hill , " All Digital Fractional - N Synthesizer for High Resolution Phase Locked Loops , ” Applied Microwave & Wireless , November / December 1997 and January / February 1998 . 7.9 Bar - Giora Goldberg , “ Analog and Digital ...
Converter - equaliser ( see also winders ) 123-126 Conveyors 113–114 , 158 Coulson , P.B. ( see Mavor & Coulson ) 81 Crompton , R.E.B. 26 , 51 , 94 Cunynghame , Henry H.S. 136 Davis , H. 74–77 passim Davy , Sir Humphry 16 , 17 , 24 ...
Electric Circuits
Explosive growth of wireless communications is demanding increased system capacity for mobile communications satellites - and the expert authors of this first-of-a-kind book explore a promising, cost-effective solution: digital beamforming ...
Bibliography O'Shea , D. , W. Callen , and W. Rhodes , An Introduction to Lasers and Their Applications , Addison - Wesley , Reading , 1977 . Siegman , A. , Lasers , University Science Books , Mill Valley , 1986 .
Biomedical/Electrical Engineering Principles of Magnetic Resonance Imaging A Signal Processing Perspective A volume in the IEEE Press Series in Biomedical Engineering Metin Akay, Series Editor Since its inception in 1971, MRI has developed ...
自动驾驶汽车最重要的主控计算机被安排在后车厢,这里除了用于运算的计算机外,还有拓普康(日本一家负责工业测距和经营医疗器械的厂商)的测距信息综合器,这套核心装备将负责汽车的行驶路线、方式的判断和执行。自动驾驶汽车技术由斯坦福大学教授、谷歌副 ...
Moore's Law ( named after Intel cofounder Gordon Moore ) states that the number of circuits packed into a given area of a silicon chip doubles approximately every eighteen months , leading to a similar improvement in processing power .