Fibre (rod) and sheet-shaped crystals with specified size for use as final products without additional machining are required in various applications of modern engineering. In order to avoid formation of internal mechanical stress in the crystal, lateral surface shaping without contact with container walls is preferred. As the crystal is not restricted by crucible walls, its cross-section is determined by the meniscus-shaping capillary forces and the heat and mass-exchange in the melt-crystal system. Any variation of the pulling rate, pressure, temperature gradient in the furnace, and melt temperature at the meniscus base leads to a change in the crystal cross-section and to pinch formation. Over the past two decades, many experimental and theoretical studies have been reported on a powerful approach to crystal lateral surface shaping without contact with container walls, namely the so-called edge-defined film-fed growth (EFG) technique. The shape and size of a single crystal grown by EFG is determined by the shape and size of the meniscus, (i.e: the liquid bridge retained between the die and the crystal) which depend on the radius or half-thickness of the die and other properties such as pulling rate, pressure, temperature gradient and melt temperature. In this book, theoretical and numerical results are obtained using a non-linear mathematical model of the EFG method. Theoretical results presented for fibres and sheets are rigorously obtained on the basis of the equations of the model. Numerical results are obtained on the basis of theoretical results using experimental data. Such results offer a complete package of the possibilities of the model for equipment designers and practical crystal growers.
Fiber Crystal Growth from the Melt reviews the growth, modelling, characterization and application of single crystal fibers.
Aims to present effective methods of estimation of the regions of attraction of asymptotically stable steady states in the case of autonomous analytical differential equations and also of discrete semi-dynamical...
In this book top experts treat general thermodynamic aspects of crystal fabrication; numerical simulation of industrial growth processes; commercial production of bulk silicon, compound semiconductors, scintillation and oxide crystals; X ...
Many studies have been done to investigate the InAs/GaAs growth using reflection high-energy electron-diffraction (RHEED) and scanning tunneling microscopy (STM). Joyce et al. [20] found that an intermediate wetting layer (WL) is formed ...
Single Crystal Growth of Semiconductors from Metallic Solutions covers the four principal growth techniques currently in use for the growth of semiconductor single crystals from metallic solutions.
Scientific and Technical Aerospace Reports
Written for engineers and researchers working in semiconductor fabrication industries, this practical text: Describes different techniques used to grow silicon single crystals Explains how grown single-crystal ingots become a complete ...
Applied Mechanics Reviews
This book is mostly recommended for students working in the field of crystal growth and for scientists and engineers in the fields of crystalline materials, crystal engineering and the industrial applications of crystallization processes.
Final rept . , D. Burgess , R. R. Cavanagh , and D. S. King . 1988 , 14p Contract DE - A105-84ER13150 Sponsored by Department of Energy , Washington , DC . Pub . in Jnl . of Chemical Physics 88 , n10 p6556-6569 , 15 May 88 .