CARACTÉRISATION EXPÉRIMENTALE DES MATÉRIAUX I : PROPRIÉTÉS PHYSIQUES , THERMIQUES , MÉCANIQUES 3. CARACTÉRISATION EXPÉRIMENTALE DES MATÉRIAUX II : ANALYSE PAR ÉLECTRONS , RAYONS X ET NEUTRONS 4. SCIENCE ET TECHNOLOGIE DES SURFACES 5.
This book also covers: SPICE modeling of the junction diode, MOS-capacitance crossover, and more.
Introduction to Microelectronic Devices: Solutions Manual
Covers ellipsometry, infrared spectroscopy, optical microscopy, modulation spectroscopy, photoluminescence and raman scattering. Bibliography.
半導體元件概論
ISTC/CSTIC is an annual semiconductor technology conference covering all the aspects of semiconductor technology and manufacturing, including devices, design, lithography, integration, materials, processes, manufacturing as well as emerging ...
[ 7 ] Jiang , Q .; Shi , H. X .; Zhao , M. J. Chem . Phys . 1999 , 111 , 2176 . ... C. Q .; Wang , Y .; Tay , B. K .; Li , S .; Huang , H .; Zhang , Y. B. J. Phys . Chem . ... [ 23 ] Battezzati , L .; Greer , A. L. Acta Metall .
This collection will be interesting and useful for experts in the field of microelectronics.
Silicon-on-insulator Technology and Devices XI: Proceedings of the International Symposium
Point defects in semiconductor materials are known to have important influence on the performance of electronic devices.
The text also focuses on the applications of these concepts to electronic and optoelectronic circuits and systems.