AlGaN/GaN-HEMT Power Amplifiers with Optimized Power-added Efficiency for X-band Applications

AlGaN/GaN-HEMT Power Amplifiers with Optimized Power-added Efficiency for X-band Applications
ISBN-10
3866446152
ISBN-13
9783866446151
Category
Digital audio broadcasting
Pages
264
Language
English
Published
2011
Publisher
KIT Scientific Publishing
Author
Jutta Kühn

Description

This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.

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